According to the US "Popular Science" website recently, scientists from IBM in the United States have developed the first integrated circuit made of graphene wafers, which is a step forward in the development of graphene computer chips. Scientists believe that this breakthrough may indicate that graphene wafers can be used to replace silicon wafers in the future. Related research is published in the latest issue of Science.
The integrated circuit is built on a piece of silicon carbide and consists of a number of graphene field effect transistors. Last year, the team led by Lin Yuming, a scientist at IBM's Thomas Watson Research Center, demonstrated the first graphene-based transistor that could run at 100G Hz, but this time the team integrated it into a complete integration. In the circuit.
Several research teams have encountered several obstacles in the development of graphene transistors and receivers: First, the thin monocrystalline layer of graphene is difficult to match with the metals and alloys used to make the chips. In addition, graphene is easily damaged during the etching process.
The Lin Yuming team found a new way to remove these obstacles by growing graphene on the silicon surface of a silicon carbide wafer. Next, they wrapped the graphene into a polymer, performed the necessary etching process, and then removed the polymer with some acetone.
The researchers said that the transistor gate is only 550 nanometers in length and the entire integrated circuit is only as large as a salt particle. Moreover, this production process can also be applied to other types of graphene materials, including the synthesis of chemical vapor deposition (CVD) graphene films on metal films, as well as optical lithography to improve cost and productivity.
According to the IEEE Pope magazine published by the Institute of Electrical and Electronics Engineers (IEEE), this integrated circuit is a key component of a broadband radio frequency mixer radio that finds two input frequencies. And the difference to output a new radio signal. Scientists say the latest graphene integrated circuits can be mixed up to 10G Hz and can withstand temperatures up to 125 degrees Celsius.
The research team believes that this integrated circuit can also run faster. At that time, chips made of such integrated circuits can improve the signals of mobile phones and transceivers. In the future, mobile phones may be considered to be unable to receive signals in the future. The place to work.
The replacement of silicon by graphene field-effect transistors may take some time, and IBM scientists will continue to improve the performance of such integrated circuits, including the use of various metals that do not damage the conductivity of graphene.
DQOK Bathroom Concealed Basin Mixer Faucet With Simple And Unique Design, DQOK Basin Faucet Created According To People's Living Habits, Create High Cost Performance Western Style /Classical High-quality Brass/304 stainless steel Faucets Makes You Creat A Wonderful And Conformtable Bathroom. DQOK Bathroom Basin Faucets Have CUPC, NSF/ANSI 61, Low-Lead,SASO,KC and CE certificates.
Concealed Basin Mixer Faucet,Waterfall Basin Faucet,Waterfall Basin Mixer Faucet,Brass Basin Faucet
Heshan Dingquan Sanitary Ware Industry Co., Ltd , https://www.dqokglobal.com