U.S. Develops Atomic Thickness New Materials to Develop Ultra-thin Devices

U.S. Develops Atomic Thickness New Materials to Help Develop Ultra-thin Devices

December 22, Beijing time According to a scientific report, an atomically thin material developed by Rice University may lead to the development of the thinnest imaging platform currently available. The synthesis of two-dimensional materials based on metal chalcogenides may be the basis for ultra-thin devices, according to Rice University researchers. One such material, molybdenum disulfide, has been extensively studied for its light-detecting properties, but copper indium selenide (CIS) also shows the same extraordinary potential.

Sidong Lei, a graduate student at Rice University's Pulitzer Ajayan laboratory for materials science, synthesized CIS, a single-layer matrix of copper, indium and selenium atoms. Ray also established a model - a three-pixel charge coupled device (CCD) - to demonstrate the ability of the material to capture images. The study was published in the American Chemical Society's journal Nano Express.

Ray said that this kind of optoelectronic memory material may be an important part of the two-dimensional electronic components that capture images. "The traditional charge-coupled devices are thick and hard. It makes no sense to combine them with two-dimensional elements," Ray explained. “The charge-coupled devices based on copper indium selenide are very thin, transparent and flexible, which is exactly what two-dimensional imaging devices are missing.”

When light hits the material, this device can trap the formed atoms and keep them until they are released for storage purposes. Copper indium selenide is highly sensitive to light because the besieged electrons will slowly dissipate, explains Robert Vajtai, a researcher at Rice University's School of Materials Science and Nanoengineering. “There are many two-dimensional materials that sense light, but none of them can be so efficient. This new material is 10 times more efficient than the best material we've seen before.”

Because this material is transparent, scanners based on copper indium selenide can use light to illuminate the picture from one side and capture the picture on the other side. For medical applications, Ray imagines that copper indium selenide can be used in small bio-imaging devices and can be monitored in real time by combining it with other two-dimensional electronic components.

In this latest study, Ray and colleagues cultivated synthetic copper indium selenide crystals. They extracted a single layer from the crystal, but tested the ability of the monolayer to capture light. This copper indium selenide monolayer is approximately 2 nanometers thick and contains a 9-atom-thick lattice. This material can also be grown by chemical vapor deposition, and the resulting crystal size will be limited by the size of the furnace.

Since the copper indium selenide is flexible, it can also be bent to match the focal plane of the imaging lens system. Ray said this will support real-time correction of aberrations and greatly simplify the entire optical system. Other co-authors of the study include Fang Fangwen and Yongji Gong from Rice University; post-doctoral researchers Bo Li, Pei Dong, and Anthony George, and Liehui Ge; undergraduates Qizhong Wang, James Bellah, and Yihan Huang; and additional staff, including Yongmin He from the Lanzhou University of China, Science and Nanotechnology. Professor of Engineering Jun Lou, Professor of Electronics and Computer Engineering Professor Stanley C. Moore, Professor of Chemistry, Biomedical Engineering, Physics and Astronomy, Naomi Harlas of the School of Materials Science and Nanotechnology (Naomi Halas). Agayan is Professor of Mechanical Engineering and Materials Science at Rice University, Benjamin M and Mary Greenwood Anderson, Professor and Dean of Materials Science and Nano Engineering, and Professor of Chemistry.

This research was supported by the Army Research Office Multidisciplinary University Research Initiative, the Advanced Technology Research Network for Semiconductor Technology Acceleration Nanomaterials Engineering Division, the Microelectronics Advanced Research Association, the Defense Advanced Research Projects Agency, the Dutch Scientific Research Organization, and Robert A. Welch. Foundation, National Academy of Safety Science and Engineering Scholarships, and funding support from the Naval Research Office. (Compiled / Yan Yan Liu Xing)

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