According to Xinhua News Agency, Japan’s Hokuriku Institute of Advanced Science and Technology University announced that its research team has developed a technology that can produce large-area silicon film “siliceneâ€. This film, which is only one atom thick, can have the properties of a semiconductor and is expected to be used in the manufacture of high-speed electronic circuits. The team covered the surface of a two-centimeter-long, 1 cm-wide silicon substrate with a ceramic film that was then heated to 900 degrees Celsius in a special vacuum. Thus, the silicon element contained in the silicon substrate penetrates the ceramic film and appears on the surface of the ceramic film to form a silicon film. If the substrate is made larger, a larger area of ​​silicon film can be produced. Only one carbon atom thick graphene is by far the thinnest material in the world, and its inventors won the 2010 Nobel Prize in Physics for this material with many magical properties. "silicene" is known as silicon-type graphene and has attracted the attention of the physics community.
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